onsemi FDG6301N-F085 Dual Digital Transistor, 6-Pin SC-70

These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

25 V, 0.22 A continuous, 0.65 A peak.
RDS(ON) = 4 Ω VGS= 4.5 V,
RDS(ON) = 5 ΩVGS= 2.7 V.
Very low level gate drive requirements allowing directoperation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness(>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
Applications
Infotainment
Portable Navigation
Infotainment
Other
Power Train
Safety and Control
Comfort and Convenience
Body Electronics
Vehicle Security Systems
Other Automotive