onsemi BD677AG NPN Darlington Transistor, 4 A dc 60 V dc HFE:750, 3-Pin TO-225

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Subtotal 100 units (supplied in a box)*

£47.20

(exc. VAT)

£56.60

(inc. VAT)

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Units
Per unit
100 - 475£0.472
500 - 975£0.386
1000 - 2475£0.313
2500 +£0.272

*price indicative

Packaging Options:
RS Stock No.:
186-7944P
Mfr. Part No.:
BD677AG
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

4 A dc

Maximum Collector Emitter Voltage

60 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-225

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

750

Maximum Collector Base Voltage

60 V dc

Maximum Collector Emitter Saturation Voltage

2.8 V dc

Height

11.1mm

Width

3mm

Maximum Power Dissipation

40 W

Dimensions

7.8 x 3 x 11.1mm

Minimum Operating Temperature

-55 °C

Length

7.8mm

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN
The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications.

High DC Current Gain hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
Pb-Free Packages are Available