onsemi TIP117G PNP Darlington Transistor, 2 (Continuous) A, 4 (Peak) A 100 V dc HFE:500, 3-Pin TO-220

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
184-1112
Mfr. Part No.:
TIP117G
Brand:
onsemi
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Brand

onsemi

Transistor Type

PNP

Maximum Continuous Collector Current

2 (Continuous) A, 4 (Peak) A

Maximum Collector Emitter Voltage

100 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

500

Maximum Collector Base Voltage

100 V dc

Maximum Collector Emitter Saturation Voltage

2.5 V dc

Maximum Collector Cut-off Current

2mA

Base Current

50mA

Height

15.75mm

Width

4.83mm

Maximum Power Dissipation

50 W

Minimum Operating Temperature

-65 °C

Dimensions

10.53 x 4.83 x 15.75mm

Maximum Operating Temperature

+150 °C

Length

10.53mm

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN), TIP115, TIP116, TIP117 (PNP) are complementary devices.

High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc
= 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Pb-Free Packages are Available