Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS

Brand

Toshiba

Transistor Type

NPN

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

400 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

100

Maximum Base Emitter Saturation Voltage

2.5 V

Maximum Collector Base Voltage

600 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

20µA

Dimensions

10 x 4.5 x 15mm

Maximum Power Dissipation

25 W @ 25 °C

Height

15mm

Width

4.5mm

Length

10mm

Base Current

1A

Maximum Operating Temperature

+150 °C