Infineon BFP740H6327XTSA1 NPN RF Bipolar Transistor, 30 mA, 4 V, 4-Pin SOT-343
- RS Stock No.:
- 827-5110
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 827-5110
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 30 mA |
| Maximum Collector Emitter Voltage | 4 V |
| Package Type | SOT-343 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 160 mW |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 13 V |
| Maximum Emitter Base Voltage | 1.2 V |
| Maximum Operating Frequency | 42 GHz |
| Pin Count | 4 |
| Number of Elements per Chip | 1 |
| Dimensions | 2 x 1.25 x 0.9mm |
| Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 827-5110
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon