Nexperia PBSS5580PA,115 PNP Transistor, 4 A, 80 V, 3-Pin HUSON

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Subtotal 40 units (supplied on a continuous strip)*

£9.04

(exc. VAT)

£10.84

(inc. VAT)

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Units
Per unit
40 - 180£0.226
200 - 380£0.219
400 - 780£0.214
800 +£0.209

*price indicative

Packaging Options:
RS Stock No.:
815-0670P
Mfr. Part No.:
PBSS5580PA,115
Brand:
Nexperia
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Brand

Nexperia

Transistor Type

PNP

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

80 V

Package Type

HUSON

Mounting Type

Surface Mount

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

-80 V

Maximum Emitter Base Voltage

-7 V

Maximum Operating Frequency

100 MHz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

2.1 x 2.1 x 0.65mm

COO (Country of Origin):
HK

Low Saturation Voltage PNP Transistors


A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


Bipolar Transistors, Nexperia