Nexperia PBSS9110T,215 PNP Transistor, -1 A, -100 V, 3-Pin SOT-23
- RS Stock No.:
- 518-2135P
- Mfr. Part No.:
- PBSS9110T,215
- Brand:
- Nexperia
Save 33% when you buy 600 units
Subtotal 75 units (supplied on a continuous strip)*
£8.775
(exc. VAT)
£10.50
(inc. VAT)
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In Stock
- 36,575 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 75 - 125 | £0.117 |
| 150 - 275 | £0.085 |
| 300 - 575 | £0.08 |
| 600 + | £0.078 |
*price indicative
- RS Stock No.:
- 518-2135P
- Mfr. Part No.:
- PBSS9110T,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -1 A | |
| Maximum Collector Emitter Voltage | -100 V | |
| Package Type | SOT-23 (TO-236AB) | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 480 mW | |
| Minimum DC Current Gain | 150 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 120 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 100 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 1 x 3 x 1.4mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -1 A | ||
Maximum Collector Emitter Voltage -100 V | ||
Package Type SOT-23 (TO-236AB) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 480 mW | ||
Minimum DC Current Gain 150 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 120 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 1 x 3 x 1.4mm | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia