Nexperia PBSS5350X,115 PNP Transistor, -3 A, -50 V, 4-Pin UPAK
- RS Stock No.:
- 518-1980P
- Mfr. Part No.:
- PBSS5350X,115
- Brand:
- Nexperia
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£3.12
(exc. VAT)
£3.74
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,060 unit(s) ready to ship
- Plus 999,998,930 unit(s) shipping from 10 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
20 - 40 | £0.156 |
50 - 90 | £0.147 |
100 - 190 | £0.123 |
200 + | £0.105 |
*price indicative
- RS Stock No.:
- 518-1980P
- Mfr. Part No.:
- PBSS5350X,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Transistor Type | PNP | |
Maximum DC Collector Current | -3 A | |
Maximum Collector Emitter Voltage | -50 V | |
Package Type | UPAK | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 1.6 W | |
Minimum DC Current Gain | 200 | |
Transistor Configuration | Single | |
Maximum Collector Base Voltage | 50 V | |
Maximum Emitter Base Voltage | 5 V | |
Maximum Operating Frequency | 100 MHz | |
Pin Count | 4 | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Dimensions | 1.6 x 4.6 x 2.6mm | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -3 A | ||
Maximum Collector Emitter Voltage -50 V | ||
Package Type UPAK | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 1.6 W | ||
Minimum DC Current Gain 200 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 50 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 1.6 x 4.6 x 2.6mm | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia