Nexperia PBSS5240T,215 PNP Transistor, -2 A, -40 V, 3-Pin SOT-23
- RS Stock No.:
- 518-1845P
- Mfr. Part No.:
- PBSS5240T,215
- Brand:
- Nexperia
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£4.12
(exc. VAT)
£4.94
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
20 - 40 | £0.206 |
50 - 90 | £0.167 |
100 - 190 | £0.122 |
200 + | £0.118 |
*price indicative
- RS Stock No.:
- 518-1845P
- Mfr. Part No.:
- PBSS5240T,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Transistor Type | PNP | |
Maximum DC Collector Current | -2 A | |
Maximum Collector Emitter Voltage | -40 V | |
Package Type | SOT-23 (TO-236AB) | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 480 mW | |
Minimum DC Current Gain | 300 | |
Transistor Configuration | Single | |
Maximum Collector Base Voltage | 40 V | |
Maximum Emitter Base Voltage | 5 V | |
Maximum Operating Frequency | 200 MHz | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Dimensions | 1 x 3 x 1.4mm | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -2 A | ||
Maximum Collector Emitter Voltage -40 V | ||
Package Type SOT-23 (TO-236AB) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 480 mW | ||
Minimum DC Current Gain 300 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 40 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 200 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 1 x 3 x 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia