Nexperia PBSS5230T,215 PNP Transistor, -2 A, -30 V, 3-Pin SOT-23
- RS Stock No.:
- 518-1839P
- Mfr. Part No.:
- PBSS5230T,215
- Brand:
- Nexperia
Subtotal 10 units (supplied on a continuous strip)*
£2.04
(exc. VAT)
£2.45
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20,990 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £0.204 |
*price indicative
- RS Stock No.:
- 518-1839P
- Mfr. Part No.:
- PBSS5230T,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -2 A | |
| Maximum Collector Emitter Voltage | -30 V | |
| Package Type | SOT-23 (TO-236AB) | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 480 mW | |
| Minimum DC Current Gain | 300 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 30 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 200 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 1 x 3 x 1.4mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -2 A | ||
Maximum Collector Emitter Voltage -30 V | ||
Package Type SOT-23 (TO-236AB) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 480 mW | ||
Minimum DC Current Gain 300 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 30 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 200 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 1 x 3 x 1.4mm | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia