Nexperia PBSS4160T,215 NPN Transistor, 900 mA, 60 V, 3-Pin SOT-23
- RS Stock No.:
- 518-1536P
- Mfr. Part No.:
- PBSS4160T,215
- Brand:
- Nexperia
Subtotal 25 units (supplied on a continuous strip)*
£1.60
(exc. VAT)
£1.925
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,600 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 + | £0.064 |
*price indicative
- RS Stock No.:
- 518-1536P
- Mfr. Part No.:
- PBSS4160T,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 900 mA | |
| Maximum Collector Emitter Voltage | 60 V | |
| Package Type | SOT-23 (TO-236AB) | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 1.25 W | |
| Minimum DC Current Gain | 250 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 80 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 220 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 1 x 3 x 1.4mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type NPN | ||
Maximum DC Collector Current 900 mA | ||
Maximum Collector Emitter Voltage 60 V | ||
Package Type SOT-23 (TO-236AB) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 1.25 W | ||
Minimum DC Current Gain 250 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 80 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 220 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 1 x 3 x 1.4mm | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia