Infineon BFP410H6327XTSA1 NPN RF Bipolar Transistor, 40 mA, 4.5 V, 4-Pin SOT-343
- RS Stock No.:
- 273-7297
- Mfr. Part No.:
- BFP410H6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£552.00
(exc. VAT)
£663.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 13 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.184 | £552.00 |
*price indicative
- RS Stock No.:
- 273-7297
- Mfr. Part No.:
- BFP410H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 40 mA | |
| Maximum Collector Emitter Voltage | 4.5 V | |
| Package Type | SOT-343 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 40 mA | ||
Maximum Collector Emitter Voltage 4.5 V | ||
Package Type SOT-343 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
The Infineon NPN RF bipolar transistor is a low noise device based on a grounded emitter that is part of Infineon established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for high frequency oscillators. It remains cost competitive without compromising on ease of use.
High gain
Minimum noise figure
Suitable for broadband low noise amplifiers
LNAs for sub 1 GHz ISM band applications
Minimum noise figure
Suitable for broadband low noise amplifiers
LNAs for sub 1 GHz ISM band applications