Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1454P
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal 125 units (supplied on a continuous strip)*
£20.00
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£23.75
(inc. VAT)
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In Stock
- Plus 2,650 unit(s) shipping from 15 June 2026
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Units | Per unit |
|---|---|
| 125 - 225 | £0.16 |
| 250 - 600 | £0.155 |
| 625 - 1225 | £0.151 |
| 1250 + | £0.148 |
*price indicative
- RS Stock No.:
- 259-1454P
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Power Dissipation Pd | 75mW | |
| Maximum Transition Frequency ft | 80GHz | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.9mm | |
| Series | BFP | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Power Dissipation Pd 75mW | ||
Maximum Transition Frequency ft 80GHz | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.9mm | ||
Series BFP | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Automotive Standard No | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA