Infineon BFP740H6327XTSA1 NPN RF Bipolar Transistor, 45 mA, 4.2 V TSFP-4-1
- RS Stock No.:
- 259-1452
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£5.225
(exc. VAT)
£6.275
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,875 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.209 | £5.23 |
| 250 - 600 | £0.167 | £4.18 |
| 625 - 1225 | £0.157 | £3.93 |
| 1250 - 2475 | £0.146 | £3.65 |
| 2500 + | £0.136 | £3.40 |
*price indicative
- RS Stock No.:
- 259-1452
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 45 mA | |
| Maximum Collector Emitter Voltage | 4.2 V | |
| Package Type | TSFP-4-1 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 45 mA | ||
Maximum Collector Emitter Voltage 4.2 V | ||
Package Type TSFP-4-1 | ||
Mounting Type Surface Mount | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) with an integrated ESD protection. It is unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits.
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Low profile and small form factor leadless package
High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 23.5 dBm at 5.5 GHz, 25 mA
Low profile and small form factor leadless package