Infineon BFP640H6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4.1 V SOT-343

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Subtotal 125 units (supplied on a continuous strip)*

£19.25

(exc. VAT)

£23.125

(inc. VAT)

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125 - 225£0.154
250 - 600£0.15
625 - 1225£0.146
1250 +£0.142

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Packaging Options:
RS Stock No.:
259-1442P
Mfr. Part No.:
BFP640H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

50 mA

Maximum Collector Emitter Voltage

4.1 V

Package Type

SOT-343

Mounting Type

Surface Mount

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

Robust high performance low noise amplifier based on Infineon's reliable
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm