Infineon BFP405H6327XTSA1 NPN RF Bipolar Transistor, 12 mA, 15 V TSFP-4
- RS Stock No.:
- 259-1421P
- Mfr. Part No.:
- BFP405H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£50.50
(exc. VAT)
£60.50
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,975 unit(s), ready to ship
Units | Per unit |
|---|---|
| 250 - 600 | £0.202 |
| 625 - 1225 | £0.189 |
| 1250 - 2475 | £0.176 |
| 2500 + | £0.164 |
*price indicative
- RS Stock No.:
- 259-1421P
- Mfr. Part No.:
- BFP405H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 12 mA | |
| Maximum Collector Emitter Voltage | 15 V | |
| Package Type | TSFP-4 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 12 mA | ||
Maximum Collector Emitter Voltage 15 V | ||
Package Type TSFP-4 | ||
Mounting Type Surface Mount | ||
The Infineon NPN silicon RF transistor for low current applications. It is suitable for wireless Communications, amplifier and oscillator applications in RF Front-end.
Smallest package 1.4 x 0.8 x 0.59 mm
Noise figure 1.25 dB at 1.8 GHz outstanding Gms 23 dB at 1.8 GHz
Transition frequency fT 25 GHz
Gold metallization for high reliability
SIEGET 25 GHz fT line
Noise figure 1.25 dB at 1.8 GHz outstanding Gms 23 dB at 1.8 GHz
Transition frequency fT 25 GHz
Gold metallization for high reliability
SIEGET 25 GHz fT line