Infineon BFR183E6327HTSA1 NPN Bipolar Transistor, 65 mA, 20 V SOT-23
- RS Stock No.:
- 258-6996
- Mfr. Part No.:
- BFR183E6327HTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£183.00
(exc. VAT)
£219.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
- Plus 999,993,000 unit(s) shipping from 16 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.061 | £183.00 |
| 6000 - 12000 | £0.058 | £174.00 |
| 15000 + | £0.056 | £168.00 |
*price indicative
- RS Stock No.:
- 258-6996
- Mfr. Part No.:
- BFR183E6327HTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 65 mA | |
| Maximum Collector Emitter Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 65 mA | ||
Maximum Collector Emitter Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Number of Elements per Chip 1 | ||
The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications
Pb free RoHS compliant package
VCEO max is 12 V
VCEO max is 12 V