Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V TSLP-3-9
- RS Stock No.:
- 258-0650P
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£25.10
(exc. VAT)
£30.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 15,000 unit(s) shipping from 04 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.251 |
| 250 - 490 | £0.241 |
| 500 - 990 | £0.231 |
| 1000 + | £0.215 |
*price indicative
- RS Stock No.:
- 258-0650P
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 35 mA | |
| Maximum Collector Emitter Voltage | 2.25 V | |
| Package Type | TSLP-3-9 | |
| Mounting Type | Surface Mount | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 35 mA | ||
Maximum Collector Emitter Voltage 2.25 V | ||
Package Type TSLP-3-9 | ||
Mounting Type Surface Mount | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
Low profile and small form factor leadless package