Toshiba TBC847B,LM(T NPN Transistor, 200 mA, 50 V, 3-Pin SOT-23
- RS Stock No.:
- 236-3587P
- Mfr. Part No.:
- TBC847B,LM(T
- Brand:
- Toshiba
Bulk discount available
Subtotal 1000 units (supplied on a reel)*
£17.00
(exc. VAT)
£20.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 41,500 unit(s) shipping from 01 December 2025
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Units | Per unit |
|---|---|
| 1000 - 1000 | £0.017 |
| 1500 - 2500 | £0.017 |
| 3000 + | £0.015 |
*price indicative
- RS Stock No.:
- 236-3587P
- Mfr. Part No.:
- TBC847B,LM(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 200 mA | |
| Maximum Collector Emitter Voltage | 50 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Minimum DC Current Gain | 200 | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Transistor Type NPN | ||
Maximum DC Collector Current 200 mA | ||
Maximum Collector Emitter Voltage 50 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Minimum DC Current Gain 200 | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Toshiba bipolar transistor made up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.
Storage temperature range −55 to 150 °C