Infineon BFR740L3RHE6327XTSA1 NPN RF Bipolar Transistor, 40 mA, 4 V, 4-Pin TSLP-3-9
- RS Stock No.:
- 219-5959P
- Mfr. Part No.:
- BFR740L3RHE6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 75 units (supplied on a continuous strip)*
£24.375
(exc. VAT)
£29.25
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 14,475 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 75 - 135 | £0.325 |
| 150 - 360 | £0.311 |
| 375 - 735 | £0.298 |
| 750 + | £0.277 |
*price indicative
- RS Stock No.:
- 219-5959P
- Mfr. Part No.:
- BFR740L3RHE6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 40 mA | |
| Maximum Collector Emitter Voltage | 4 V | |
| Package Type | TSLP-3-9 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 40 mA | ||
Maximum Collector Emitter Voltage 4 V | ||
Package Type TSLP-3-9 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
The Infineon BFP740L3RH is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).
Low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA
High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA
Low profile and small form factor leadless package
High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA
Low profile and small form factor leadless package