Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4 V, 4-Pin TSFP
- RS Stock No.:
- 216-8352P
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Brand:
- Infineon
Subtotal 50 units (supplied on a continuous strip)*
£7.75
(exc. VAT)
£9.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,850 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 + | £0.155 |
*price indicative
- RS Stock No.:
- 216-8352P
- Mfr. Part No.:
- BFP640FH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 50 mA | |
| Maximum Collector Emitter Voltage | 4 V | |
| Package Type | TSFP | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 50 mA | ||
Maximum Collector Emitter Voltage 4 V | ||
Package Type TSFP | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability