onsemi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

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Subtotal 20 units (supplied in a tube)*

£146.90

(exc. VAT)

£176.28

(inc. VAT)

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20 +£7.345

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Packaging Options:
RS Stock No.:
195-2574P
Mfr. Part No.:
AFGHL50T65SQDC
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

100 A

Maximum Collector Emitter Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

238 W

Transistor Configuration

Single

Maximum Operating Frequency

1 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.

Copacked with SiC schottky barrier diode
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching