onsemi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247
- RS Stock No.:
- 195-2574
- Mfr. Part No.:
- AFGHL50T65SQDC
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£17.04
(exc. VAT)
£20.44
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 276 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £8.52 | £17.04 |
20 + | £7.345 | £14.69 |
*price indicative
- RS Stock No.:
- 195-2574
- Mfr. Part No.:
- AFGHL50T65SQDC
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Transistor Type | NPN | |
Maximum DC Collector Current | 100 A | |
Maximum Collector Emitter Voltage | 650 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Maximum Power Dissipation | 238 W | |
Transistor Configuration | Single | |
Maximum Operating Frequency | 1 MHz | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Dimensions | 15.87 x 4.82 x 20.82mm | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum DC Collector Current 100 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 238 W | ||
Transistor Configuration Single | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Maximum Operating Temperature +175 °C | ||
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Copacked with SiC schottky barrier diode
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching