STMicroelectronics BUL1102EFP NPN Transistor, 8 A, 450 V, 3-Pin TO-220FP
- RS Stock No.:
- 188-8449P
- Mfr. Part No.:
- BUL1102EFP
- Brand:
- STMicroelectronics
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Subtotal 50 units (supplied in a tube)*
£41.50
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£50.00
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In Stock
- 1,700 unit(s) ready to ship
- Plus 999,998,290 unit(s) shipping from 10 February 2026
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Units | Per unit |
|---|---|
| 50 - 90 | £0.83 |
| 100 - 240 | £0.747 |
| 250 - 490 | £0.673 |
| 500 + | £0.64 |
*price indicative
- RS Stock No.:
- 188-8449P
- Mfr. Part No.:
- BUL1102EFP
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 8 A | |
| Maximum Collector Emitter Voltage | 450 V | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 70 W | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage | 12 V | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 10.4 x 4.6 x 16.4mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Transistor Type NPN | ||
Maximum DC Collector Current 8 A | ||
Maximum Collector Emitter Voltage 450 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage 12 V | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 10.4 x 4.6 x 16.4mm | ||
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration