onsemi FDG6321C Dual Digital Transistor, 6-Pin SC-70

View all Bipolar Transistors
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Subtotal 100 units (supplied on a continuous strip)*

£31.00

(exc. VAT)

£37.00

(inc. VAT)

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Per unit
100 - 225£0.31
250 - 475£0.268
500 - 975£0.236
1000 +£0.215

*price indicative

Packaging Options:
RS Stock No.:
186-8443P
Mfr. Part No.:
FDG6321C
Brand:
onsemi
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Brand

onsemi

Package Type

SC-70

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Pin Count

6

Number of Elements per Chip

2

Dimensions

2.2 x 1.35 x 1mm

Maximum Operating Temperature

+150 °C

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

N-Ch
0.50 A, 25 V
RDS(ON) = 0.45 Ω @ VGS= 4.5 V
RDS(ON) = 0.60 Ω @ VGS= 2.7 V
P-Ch
-0.41 A, -25 V
RDS(ON) = 1.1 Ω @ VGS= -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Applications
This product is general usage and suitable for many different applications.