onsemi BUL45D2G NPN Transistor, 10 A, 400 V, 3-Pin TO-220
- RS Stock No.:
- 186-8032P
- Mfr. Part No.:
- BUL45D2G
- Brand:
- onsemi
Subtotal 10 units (supplied in a tube)*
£17.92
(exc. VAT)
£21.50
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 140 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 + | £1.792 |
*price indicative
- RS Stock No.:
- 186-8032P
- Mfr. Part No.:
- BUL45D2G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 400 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 75 W | |
| Minimum DC Current Gain | 22 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 700 V dc | |
| Maximum Emitter Base Voltage | 12 V dc | |
| Maximum Operating Frequency | 1 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 10.53 x 4.83 x 15.75mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum DC Collector Current 10 A | ||
Maximum Collector Emitter Voltage 400 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 75 W | ||
Minimum DC Current Gain 22 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 700 V dc | ||
Maximum Emitter Base Voltage 12 V dc | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 10.53 x 4.83 x 15.75mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
Standards
Manufacturer Part Nos with S prefix are automotive qualified to AEC-Q101 standard.
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available