onsemi ISL9V5036P3-F085 Digital Transistor, 390 (Breakdown) V, 3-Pin TO-220
- RS Stock No.:
- 186-7980
- Mfr. Part No.:
- ISL9V5036P3-F085
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£19.98
(exc. VAT)
£23.975
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 35 left, ready to ship
- Plus 30 left, shipping from 28 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £3.996 | £19.98 |
*price indicative
- RS Stock No.:
- 186-7980
- Mfr. Part No.:
- ISL9V5036P3-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Collector Emitter Voltage | 390 (Breakdown) V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Base-Emitter Resistor | 30kΩ | |
| Typical Input Resistor | 75 Ω | |
| Maximum Operating Temperature | +175 °C | |
| Dimensions | 10.67 x 4.7 x 9.4mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Collector Emitter Voltage 390 (Breakdown) V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Base-Emitter Resistor 30kΩ | ||
Typical Input Resistor 75 Ω | ||
Maximum Operating Temperature +175 °C | ||
Dimensions 10.67 x 4.7 x 9.4mm | ||
- COO (Country of Origin):
- PH
The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit, specifically as coil driver. Internal diode provide voltage clamping without the need for external component.
Industry Standard TO-220 package
SCIS Energy = 500mJ at TJ = 25℃
Logic Level Gate Drive
Applications
Body Electronics
SCIS Energy = 500mJ at TJ = 25℃
Logic Level Gate Drive
Applications
Body Electronics