onsemi BDX53BG NPN Digital Transistor, 80 V dc, 3-Pin TO-220
- RS Stock No.:
- 186-7938P
- Mfr. Part No.:
- BDX53BG
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied in a tube)*
£65.10
(exc. VAT)
£78.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.651 |
| 250 - 490 | £0.645 |
| 500 - 990 | £0.553 |
| 1000 + | £0.449 |
*price indicative
- RS Stock No.:
- 186-7938P
- Mfr. Part No.:
- BDX53BG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | NPN | |
| Maximum Collector Emitter Voltage | 80 V dc | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 65 W | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage | 5 V dc | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 10.53 x 4.83 x 9.28mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum Collector Emitter Voltage 80 V dc | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage 5 V dc | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 10.53 x 4.83 x 9.28mm | ||
- COO (Country of Origin):
- CN
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available