onsemi BDX33BG NPN Digital Transistor, 80 V dc, 3-Pin TO-220

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Subtotal 100 units (supplied in a tube)*

£43.30

(exc. VAT)

£52.00

(inc. VAT)

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Units
Per unit
100 - 240£0.433
250 - 490£0.426
500 - 990£0.366
1000 +£0.307

*price indicative

Packaging Options:
RS Stock No.:
186-7894P
Mfr. Part No.:
BDX33BG
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Collector Emitter Voltage

80 V dc

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Emitter Base Voltage

5 V dc

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.53 x 4.83 x 9.28mm

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
Monolithic Construction with Build-In Base-Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available