This P-channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Applications This product is general usage and suitable for many different applications. Load Switch Synchronous Rectifier
Attribute
Value
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
3.1 W
Pin Count
8
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
4.9 x 3.9 x 1.58mm
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