onsemi 2SB817C-1E PNP Transistor, 12 A, -140 V, 3-Pin TO
- RS Stock No.:
- 184-4986
- Mfr. Part No.:
- 2SB817C-1E
- Brand:
- ON Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 184-4986
- Mfr. Part No.:
- 2SB817C-1E
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | 12 A | |
| Maximum Collector Emitter Voltage | -140 V | |
| Package Type | TO | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | -160 V | |
| Maximum Emitter Base Voltage | -6 V | |
| Maximum Operating Frequency | 1 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 15.6 x 4.8 x 19.9mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Transistor Type PNP | ||
Maximum DC Collector Current 12 A | ||
Maximum Collector Emitter Voltage -140 V | ||
Package Type TO | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage -160 V | ||
Maximum Emitter Base Voltage -6 V | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 15.6 x 4.8 x 19.9mm | ||
- COO (Country of Origin):
- KP
2SB817C is Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L.
Large current capacitance
Wide SOA and high durability against breakdown
Adoption of MBIT process
Wide SOA and high durability against breakdown
Adoption of MBIT process