onsemi MJB44H11G NPN Transistor, 20 A, 80 V dc, 3 + Tab-Pin D2PAK (TO-263)
- RS Stock No.:
- 184-4959P
- Mfr. Part No.:
- MJB44H11G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied in a tube)*
£72.60
(exc. VAT)
£87.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 50 unit(s) ready to ship
- Plus 250 unit(s) shipping from 12 November 2025
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Units | Per unit |
|---|---|
| 100 - 240 | £0.726 |
| 250 - 490 | £0.717 |
| 500 - 990 | £0.614 |
| 1000 + | £0.579 |
*price indicative
- RS Stock No.:
- 184-4959P
- Mfr. Part No.:
- MJB44H11G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 80 V dc | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 50 W | |
| Minimum DC Current Gain | 60 | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage | 5 V dc | |
| Maximum Operating Frequency | 1 MHz | |
| Pin Count | 3 + Tab | |
| Number of Elements per Chip | 1 | |
| Dimensions | 10.29 x 9.65 x 4.83mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum DC Collector Current 20 A | ||
Maximum Collector Emitter Voltage 80 V dc | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 50 W | ||
Minimum DC Current Gain 60 | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage 5 V dc | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 + Tab | ||
Number of Elements per Chip 1 | ||
Dimensions 10.29 x 9.65 x 4.83mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- MY
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free