onsemi 2SA2210-1E PNP Transistor, -20 A, -50 V, 3-Pin TO-220F
- RS Stock No.:
- 184-4925
- Mfr. Part No.:
- 2SA2210-1E
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£6.18
(exc. VAT)
£7.415
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 15 unit(s) ready to ship
- Plus 10 unit(s) shipping from 21 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.236 | £6.18 |
*price indicative
- RS Stock No.:
- 184-4925
- Mfr. Part No.:
- 2SA2210-1E
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -20 A | |
| Maximum Collector Emitter Voltage | -50 V | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 30 W | |
| Minimum DC Current Gain | 150 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | -50 V | |
| Maximum Emitter Base Voltage | -6 V | |
| Maximum Operating Frequency | 1 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 10.16 x 4.7 x 15.87mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type PNP | ||
Maximum DC Collector Current -20 A | ||
Maximum Collector Emitter Voltage -50 V | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 30 W | ||
Minimum DC Current Gain 150 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage -50 V | ||
Maximum Emitter Base Voltage -6 V | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 10.16 x 4.7 x 15.87mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- KR
2SA2210 is a Bipolar Transistor, -50V, -20A, Low VCE(sat), PNP TO-220F-3SG for High-Current Switching Applications.
Adoption of MBIT process
Large current capacitance
Low collector to emitter saturation voltage
High speed switching
Large current capacitance
Low collector to emitter saturation voltage
High speed switching