onsemi MJE802G NPN Transistor, 4 A, 80 V dc, 3-Pin TO-225

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
184-4920
Mfr. Part No.:
MJE802G
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

80 V dc

Package Type

TO-225

Mounting Type

Through Hole

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V dc

Maximum Emitter Base Voltage

5 V dc

Maximum Operating Frequency

1 MHz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

7.8 x 3 x 11.1mm

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP), and MJE800, MJE802, MJE803 (NPN) are complementary devices.

High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages - MJE700 and MJE800 series