onsemi 2SC6082-1E NPN Transistor, 15 A, 60 V, 3-Pin TO-220F
- RS Stock No.:
- 184-4647P
- Mfr. Part No.:
- 2SC6082-1E
- Brand:
- onsemi
Subtotal 10 units (supplied in a tube)*
£12.65
(exc. VAT)
£15.18
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10 unit(s) ready to ship
- Plus 100 unit(s) shipping from 24 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £1.265 |
*price indicative
- RS Stock No.:
- 184-4647P
- Mfr. Part No.:
- 2SC6082-1E
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 15 A | |
| Maximum Collector Emitter Voltage | 60 V | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 23 W | |
| Minimum DC Current Gain | 200 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 60 V | |
| Maximum Emitter Base Voltage | 6 V | |
| Maximum Operating Frequency | 1 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 10.16 x 4.7 x 15.87mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum DC Collector Current 15 A | ||
Maximum Collector Emitter Voltage 60 V | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 23 W | ||
Minimum DC Current Gain 200 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 60 V | ||
Maximum Emitter Base Voltage 6 V | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 10.16 x 4.7 x 15.87mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- KR
2SC6082 is a Bipolar Transistor, 50 V, 15 A, Low VCE (sat), NPN TO-220F-3SG for High-Speed Switching Application.
Adoption of MBIT process
Large current capacitance
Low collector to emitter saturation voltage
High speed switching
Applications
High-speed switching applications (Switching regulator, driver circuit)
Large current capacitance
Low collector to emitter saturation voltage
High speed switching
Applications
High-speed switching applications (Switching regulator, driver circuit)