onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225
- RS Stock No.:
- 184-4314
- Mfr. Part No.:
- MJE200G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 box of 500 units)*
£156.00
(exc. VAT)
£187.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Box* |
|---|---|---|
| 500 - 500 | £0.312 | £156.00 |
| 1000 - 2000 | £0.256 | £128.00 |
| 2500 - 9500 | £0.254 | £127.00 |
| 10000 + | £0.252 | £126.00 |
*price indicative
- RS Stock No.:
- 184-4314
- Mfr. Part No.:
- MJE200G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 40 V | |
| Package Type | TO-225 | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 15 W | |
| Minimum DC Current Gain | 45 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 25 V dc | |
| Maximum Emitter Base Voltage | 8 V dc | |
| Maximum Operating Frequency | 10 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 7.8 x 3 x 11.1mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum DC Collector Current 10 A | ||
Maximum Collector Emitter Voltage 40 V | ||
Package Type TO-225 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 15 W | ||
Minimum DC Current Gain 45 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 25 V dc | ||
Maximum Emitter Base Voltage 8 V dc | ||
Maximum Operating Frequency 10 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 7.8 x 3 x 11.1mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free