Infineon BFP842ESDH6327XTSA1 NPN RF Bipolar Transistor, 40 mA, 3.25 V, 4-Pin SOT-343

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Subtotal 100 units (supplied on a continuous strip)*

£34.00

(exc. VAT)

£41.00

(inc. VAT)

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Units
Per unit
100 - 480£0.34
500 - 980£0.306
1000 - 1980£0.256
2000 +£0.241

*price indicative

Packaging Options:
RS Stock No.:
170-2366P
Mfr. Part No.:
BFP842ESDH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

40 mA

Maximum Collector Emitter Voltage

3.25 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

120 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

3.5 V, 4.1 V

Maximum Operating Frequency

60 GHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.

Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads