Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Nexperia
	Transistor Type	NPN + PNP
	Maximum DC Collector Current	3 A
	Maximum Collector Emitter Voltage	100 V
	Package Type	LFPAK56D, SOT1205
	Mounting Type	Surface Mount
	Maximum Power Dissipation	25 W
	Maximum Collector Base Voltage	100 V
	Maximum Emitter Base Voltage	7 V
	Maximum Operating Frequency	140 MHz
	Pin Count	8
	Number of Elements per Chip	2
	Maximum Operating Temperature	+175 °C
	Dimensions	5.3 x 4.7 x 1.05mm

	Select all
	Brand Nexperia
	Transistor Type NPN + PNP
	Maximum DC Collector Current 3 A
	Maximum Collector Emitter Voltage 100 V
	Package Type LFPAK56D, SOT1205
	Mounting Type Surface Mount
	Maximum Power Dissipation 25 W
	Maximum Collector Base Voltage 100 V
	Maximum Emitter Base Voltage 7 V
	Maximum Operating Frequency 140 MHz
	Pin Count 8
	Number of Elements per Chip 2
	Maximum Operating Temperature +175 °C
	Dimensions 5.3 x 4.7 x 1.05mm

NPN/PNP high power double bipolar transistor, NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement PHPT610030NK. PNP/PNP complement PHPT610030PK.

High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified

Nexperia PHPT610030NPKX Dual NPN + PNP Transistor, 3 A, 100 V, 8-Pin LFPAK56D, SOT1205

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