A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Note
NXP is a trademark of NXP B.V.
Bipolar Transistors, Nexperia
Attribute
Value
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
40 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3.1 x 1.7mm
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