Nexperia PBSS5160U,115 PNP Transistor, -1 A, -60 V, 3-Pin UMT
- RS Stock No.:
- 485-353P
- Mfr. Part No.:
- PBSS5160U,115
- Brand:
- Nexperia
Bulk discount available
Subtotal 60 units (supplied on a continuous strip)*
£10.86
(exc. VAT)
£13.02
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 60 - 100 | £0.181 |
| 120 - 220 | £0.08 |
| 240 - 460 | £0.078 |
| 480 + | £0.076 |
*price indicative
- RS Stock No.:
- 485-353P
- Mfr. Part No.:
- PBSS5160U,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -1 A | |
| Maximum Collector Emitter Voltage | -60 V | |
| Package Type | UMT | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 415 mW | |
| Minimum DC Current Gain | 200 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 80 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 185 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 1 x 2.2 x 1.35mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -1 A | ||
Maximum Collector Emitter Voltage -60 V | ||
Package Type UMT | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 415 mW | ||
Minimum DC Current Gain 200 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 80 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 185 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 1 x 2.2 x 1.35mm | ||
Maximum Operating Temperature +150 °C | ||
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia