Fuji Electric FGW15N120HD IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
772-9020
Mfr. Part No.:
FGW15N120HD
Brand:
Fuji Electric
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Brand

Fuji Electric

Maximum Continuous Collector Current

15 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

155 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.03 x 20.95mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

IGBT Discretes, Fuji Electric



IGBT Discretes & Modules, Fuji Electric


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.