Subtotal 5 units (supplied on a continuous strip)*
£5.76
(exc. VAT)
£6.91
(inc. VAT)
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In Stock
- Plus 2,430 unit(s) shipping from 06 April 2026
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Units | Per unit |
|---|---|
| 5 + | £1.152 |
*price indicative
- RS Stock No.:
- 253-3500P
- Mfr. Part No.:
- BIDD05N60T
- Brand:
- Bourns
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 82W | |
| Package Type | TO-252 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | BIDD05N60T | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 82W | ||
Package Type TO-252 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series BIDD05N60T | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant