STMicroelectronics VIPERGAN65TR 16-Pin, QFN (5 x 6 mm)

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Packaging Options:
RS Stock No.:
261-5500
Mfr. Part No.:
VIPERGAN65TR
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Flyback Controller

Switching Frequency

240kHz

Mount Type

Surface

Package Type

QFN (5 x 6 mm)

Pin Count

16

Maximum Duty Cycle

50%

Series

VIPERGAN100

Standards/Approvals

RoHS

Automotive Standard

No

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

COO (Country of Origin):
TH

Advanced quasi-resonant offline high voltage converter with E-mode GaN HEMT


The VIPERGAN65 is a high voltage converter, designed for medium power quasi-resonant ZVS (Zero Voltage Switching at switch turn-on) flyback converters, capable to provide an output power up to 65 W in wide range.

It integrates a complete set of features that provide an extremely flexible and easy to use chip and helps to design a highly efficient offline power supply. The ZVS quasi-resonant operation with the dynamic blanking time feature and the valley synchronization function, that turns on the power switch always at the valley of the drain resonance, reduces the switching losses and maximizes the overall efficiency at any input line and load condition. The advanced power management with the low quiescent helps to achieve low stand-by consumptions. The feed-forward compensation minimizes the maximum output peak power variation over the entire input voltage range.

In addition to the above functions, the device offers protection features that considerably increase end-product’s safety and reliability: the output overvoltage protection, the overtemperature protection (OTP), the overload protection (OLP), the brown-in/out protection, that set the input voltage level to power on and power off the converter and the input overvoltage protection (iOVP), that protects the system in case of an abnormal increase of the input line. All the protections are auto-restart mode.

Key features


  • Quasi-resonant (QR) flyback controller

  • 650 V E-mode power GaN transistor

  • Embedded sense FET

  • Dynamic blanking time and adjustable valley synchronization delay functions, to maximize efficiency at any input line and load condition

  • Valley-lock to ensure constant valley skipping

  • Advanced power management for less than 30 mW standby power consumption with adaptive burst-mode

  • Output OVP protection

  • Input voltage feed-forward compensation for mains independent OPP variation

  • Brown-in and brown-out protection

  • Input OVP protection

  • Embedded thermal shutdown

  • Frequency jitter for EMI suppression

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