The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
Very high speed: 45 ns Industrial: –40 °C to +85 °C Automotive-E: –40 °C to +125 °C Wide voltage range: 4.5 V–5.5 V Ultra low standby power Typical standby current: 2 μA Maximum standby current: 8 μA (Industrial) Ultra low active power Typical active current: 1.8 mA at f = 1 MHz Ultra low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package