Infineon SRAM, CY62136EV30LL-45ZSXI- 2Mbit
- RS Stock No.:
- 124-2938
- Mfr. Part No.:
- CY62136EV30LL-45ZSXI
- Brand:
- Cypress Semiconductor
Discontinued
- RS Stock No.:
- 124-2938
- Mfr. Part No.:
- CY62136EV30LL-45ZSXI
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 2Mbit | |
| Organisation | 128k x 16 bit | |
| Number of Words | 128k | |
| Number of Bits per Word | 16bit | |
| Maximum Random Access Time | 45ns | |
| Address Bus Width | 16bit | |
| Clock Frequency | 1MHz | |
| Low Power | Yes | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.51 x 10.26 x 1.04mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1.04mm | |
| Minimum Operating Supply Voltage | 2.2 V | |
| Width | 10.26mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Temperature | -40 °C | |
| Length | 18.51mm | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 2Mbit | ||
Organisation 128k x 16 bit | ||
Number of Words 128k | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 45ns | ||
Address Bus Width 16bit | ||
Clock Frequency 1MHz | ||
Low Power Yes | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.51 x 10.26 x 1.04mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1.04mm | ||
Minimum Operating Supply Voltage 2.2 V | ||
Width 10.26mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
Length 18.51mm | ||
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
Very high speed: 45 ns
Wide voltage range: 2.20 V to 3.60 V
Pin compatible with CY62136CV30
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA
Ultra low active power
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed/power
Offered in a Pb-free 48-ball very fine ball grid array (VFBGA) and 44-pin thin small outline package (TSOP II) packages
Wide voltage range: 2.20 V to 3.60 V
Pin compatible with CY62136CV30
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA
Ultra low active power
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed/power
Offered in a Pb-free 48-ball very fine ball grid array (VFBGA) and 44-pin thin small outline package (TSOP II) packages
SRAM (Static Random Access Memory)