Infineon EB 2ED2410 3D 1BCSP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- RS Stock No.:
- 273-2060
- Mfr. Part No.:
- EB2ED24103D1BCSPTOBO1
- Brand:
- Infineon
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Subtotal (1 unit)*
£82.78
(exc. VAT)
£99.34
(inc. VAT)
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- 2 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 1 | £82.78 |
| 2 - 4 | £80.65 |
| 5 + | £78.64 |
*price indicative
- RS Stock No.:
- 273-2060
- Mfr. Part No.:
- EB2ED24103D1BCSPTOBO1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Power Management Function | MOSFET Gate Driver | |
| For Use With | 2ED2410-EM 24 V Evaluation Motherboard | |
| Kit Classification | Evaluation Board | |
| Featured Device | Gate Driver, Power MOSFET | |
| Kit Name | EB 2ED2410 3D 1BCSP | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Power Management Function MOSFET Gate Driver | ||
For Use With 2ED2410-EM 24 V Evaluation Motherboard | ||
Kit Classification Evaluation Board | ||
Featured Device Gate Driver, Power MOSFET | ||
Kit Name EB 2ED2410 3D 1BCSP | ||
EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common source, pre-charging
This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.
This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common source configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.
This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common source configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.
Following other daughterboards are available:
•EB 2ED2410 3D 1BCS:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Dedicated pre-charge path for loads with high input capacitance
•Nominal current up to 20 A continuous or 30 A for 10 min
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Dedicated pre-charge path for loads with high input capacitance
•Nominal current up to 20 A continuous or 30 A for 10 min