onsemi, FOD3125S DC Input IGBT, MOSFET Output Optocoupler, Surface Mount, 8-Pin SMT
- RS Stock No.:
- 189-0519
- Mfr. Part No.:
- FOD3125S
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 189-0519
- Mfr. Part No.:
- FOD3125S
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Mounting Type | Surface Mount | |
Output Device | IGBT, MOSFET | |
Maximum Forward Voltage | 1.8V | |
Number of Channels | 1 | |
Number of Pins | 8 | |
Package Type | SMT | |
Input Current Type | DC | |
Typical Rise Time | 60ns | |
Maximum Input Current | 16 mA | |
Isolation Voltage | 5000 Vrms | |
Logic Output | Yes | |
Typical Fall Time | 60ns | |
Series | FOD | |
Select all | ||
---|---|---|
Brand onsemi | ||
Mounting Type Surface Mount | ||
Output Device IGBT, MOSFET | ||
Maximum Forward Voltage 1.8V | ||
Number of Channels 1 | ||
Number of Pins 8 | ||
Package Type SMT | ||
Input Current Type DC | ||
Typical Rise Time 60ns | ||
Maximum Input Current 16 mA | ||
Isolation Voltage 5000 Vrms | ||
Logic Output Yes | ||
Typical Fall Time 60ns | ||
Series FOD | ||
The FOD3125 is a 2.5 A Output Current Gate Drive Optocoupler, capable of driving most medium power IGBT/MOSFET at high temperature up to 125°C. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes ON Semiconductors coplanar packaging technology, Optoplanar®, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. It consists of a gallium aluminium arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage.
Extended Industrial Temperate Range, -40°C to 125°C
High Noise Immunity Characterized by 35kV/μs Minimum Common Mode Rejection
2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT
Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail
Fast switching speed
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
400 ns max. Propagation Delay
100 ns max. Pulse Width Distortion
Under-Voltage LockOut (UVLO) with hysteresis
Applications
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
High Noise Immunity Characterized by 35kV/μs Minimum Common Mode Rejection
2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT
Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail
Fast switching speed
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
400 ns max. Propagation Delay
100 ns max. Pulse Width Distortion
Under-Voltage LockOut (UVLO) with hysteresis
Applications
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
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