onsemi, FOD3125 DC Input IGBT, MOSFET Output Optocoupler, Through Hole, 8-Pin PDIP
- RS Stock No.:
- 189-0515
- Mfr. Part No.:
- FOD3125
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£14.88
(exc. VAT)
£17.855
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.976 | £14.88 |
| 50 - 95 | £2.566 | £12.83 |
| 100 + | £2.224 | £11.12 |
*price indicative
- RS Stock No.:
- 189-0515
- Mfr. Part No.:
- FOD3125
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mounting Type | Through Hole | |
| Output Device | IGBT, MOSFET | |
| Maximum Forward Voltage | 1.8V | |
| Number of Channels | 1 | |
| Number of Pins | 8 | |
| Package Type | PDIP | |
| Input Current Type | DC | |
| Typical Rise Time | 60ns | |
| Maximum Input Current | 16 mA | |
| Isolation Voltage | 5000 Vrms | |
| Logic Output | Yes | |
| Typical Fall Time | 60ns | |
| Series | FOD | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Mounting Type Through Hole | ||
Output Device IGBT, MOSFET | ||
Maximum Forward Voltage 1.8V | ||
Number of Channels 1 | ||
Number of Pins 8 | ||
Package Type PDIP | ||
Input Current Type DC | ||
Typical Rise Time 60ns | ||
Maximum Input Current 16 mA | ||
Isolation Voltage 5000 Vrms | ||
Logic Output Yes | ||
Typical Fall Time 60ns | ||
Series FOD | ||
The FOD3125 is a 2.5 A Output Current Gate Drive Optocoupler, capable of driving most medium power IGBT/MOSFET at high temperature up to 125°C. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes ON Semiconductor’s coplanar packaging technology, Optoplanar®, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. It consists of a gallium aluminium arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage.
Extended Industrial Temperate Range, -40°C to 125°C
High Noise Immunity Characterized by 35kV/μs Minimum Common Mode Rejection
2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT
Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail
Fast switching speed
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
400 ns max. Propagation Delay
100 ns max. Pulse Width Distortion
Under-Voltage LockOut (UVLO) with hysteresis
Applications
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
High Noise Immunity Characterized by 35kV/μs Minimum Common Mode Rejection
2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT
Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail
Fast switching speed
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
400 ns max. Propagation Delay
100 ns max. Pulse Width Distortion
Under-Voltage LockOut (UVLO) with hysteresis
Applications
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive