Cypress Semiconductor 256kbit 45ns NVRAM, 44-Pin TSOP, CY14B256LA-ZS25XI
- RS Stock No.:
- 194-9092
- Mfr. Part No.:
- CY14B256LA-ZS25XI
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 194-9092
- Mfr. Part No.:
- CY14B256LA-ZS25XI
- Brand:
- Cypress Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 45ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.51 x 10.26 x 1.04mm | |
| Length | 18.51mm | |
| Width | 10.26mm | |
| Height | 1.04mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 32K | |
| Number of Bits per Word | 8bit | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 45ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.51 x 10.26 x 1.04mm | ||
Length 18.51mm | ||
Width 10.26mm | ||
Height 1.04mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 32K | ||
Number of Bits per Word 8bit | ||
- COO (Country of Origin):
- CN
The Cypress CY14B256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.
