Infineon 4Mbit 45ns NVRAM, 44-Pin TSOP, CY14B104LA-ZS25XI
- RS Stock No.:
- 194-9072
- Mfr. Part No.:
- CY14B104LA-ZS25XI
- Brand:
- Infineon
Subtotal (1 unit)*
£25.43
(exc. VAT)
£30.52
(inc. VAT)
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In Stock
- 316 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £25.43 |
*price indicative
- RS Stock No.:
- 194-9072
- Mfr. Part No.:
- CY14B104LA-ZS25XI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 45ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.51 x 10.26 x 1.04mm | |
| Length | 18.51mm | |
| Width | 10.26mm | |
| Height | 1.04mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 512K | |
| Number of Bits per Word | 8bit | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4Mbit | ||
Organisation 512K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 45ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.51 x 10.26 x 1.04mm | ||
Length 18.51mm | ||
Width 10.26mm | ||
Height 1.04mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 512K | ||
Number of Bits per Word 8bit | ||
- COO (Country of Origin):
- PH
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.